r e visi o n da te : 05/20/0 5 the aero ex / metelics mss50,000 series of schottk y diodes are fabricated on n-t y pe epitaxial substrates usin g proprietar y processes that y ield the hi g hest fc o s in the industr y . o ptimum mixer p erformance is obtained with l o p ower of +2 dbm to +8 dbm per diode . v f , r d and c j matchin g options chip, beam lead or packaged device s h i -rel screen i n g per mil-prf-1950 0 and mil-prf-38534 available description features mss50 , 000 series high barrier s ilicon s chottky diode s chip electrical specifications, t a = 25 oc absolute maximum ratings p aram ete rs r at i n g r everse v o l tag e r a ted v br f orward current 50 m a op eration tem p erature - 65 o c to +150 o c s tora g e temperatur e - 65 o c to +150 o c p ower dissi p atio n 100 mw per junction at t a t = 25 oc, derate a linearly to zero at t a t = +150 o c s oldering temperature (packaged) + 260 o c f or 5 sec . b eam lead pull strengt h 4 grams minimu m model c on? guratio n v f typ v v br min v c j typ / max p f r s ty p r d max f co typ g h z out lin e m ss50,048-c15 s in g le junctio n 0 . 5 4 0.12 / 0.15 7 15 1 9 0 c 15 mss 50,062- c 1 6 s in g le junctio n 0 . 5 5 0.50 / 0.5 5 2 12 160 c 16 t e s t c ondition s i f = 1 ma i r = r 10
r ev i s i on date: 05/20/05 mss50 , 000 serie s high barrier s ilicon s chottky diode s 2 aero? ex / metelics, inc . w ww.a e r o? e x-m ete li c s. co m beam lead electrical specifications, t a = 25 oc packaged electrical specifications, t a = 25 oc m o d e l c on ? g uration v f typ v v br min v c j typ / max pf r s typ r d max f co typ g h z o utline mss 50,146-b10 b s in g le junction 0.52 5 0.0 7 / 0. 12 9 1 8 253 b 1 0 b m ss50 , 244-b2 0 s eries tee 0.5 2 4 0. 1 5 / 0. 2 0 7 1 6 1 83 b 2 0 m ss50 , 448-b4 0 r ing qua d 0 .52 1 0 0.20 / 0.2 5 6 14 13 3 b 40 t est c ondition s i f = 1 m a i r = r 1 0
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